to ? 92 1. emitter 2. collector 3. base to-92 plastic-encapsulate transistors TSC1417 transistor (npn) features z general purpose switch ing and amplification. maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 20 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 15 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 3 v collector cut-off current i cbo v cb =10v,i e =0 1 a emitter cut-off current i ebo v eb =2v,i c =0 1 a dc current gain h fe v ce =6v, i c =1ma 29 270 collector-emitter saturation voltage v ce(sat) i c =10ma,i b =1ma 0.5 v base-emitter saturation voltage v be (sat) i c =10ma,i b =1ma 1.42 v transition frequency f t v ce =6v,i c =1ma 300 mhz classification of h fe rank d e f g h i j range 29-45 39-60 54-80 72-108 97-146 132-198 180-270 symbol parameter value unit v cbo collector-base voltage 20 v v ceo collector-emitter voltage 15 v v ebo emitter-base voltage 3 v i c collector current 30 ma p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|